Datasheet > 2SC3583-R35

2SC3583-R35

更新时间： 2024-11-23 21:06:23

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器光电二极管晶体管
页数	文件大小	规格书
10页	315K
描述
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

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2SC3583-R35 技术参数

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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型号	品牌	获取价格	描述	数据表
2SC3583-R35-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-R-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583S	NEC	获取价格	BJT
2SC3583-S	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-S-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-T1B-A	RENESAS	获取价格	2SC3583-T1B-A
2SC3583-T2B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585	RENESAS	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
2SC3585	TYSEMI	获取价格	NF 1.8 dB TYP. f = 2.0 GHz Ga 9 dB TYP.f = 2.0 GHz