Datasheet > 2SC3583-R35-A

2SC3583-R35-A

更新时间： 2024-11-26 14:46:19

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	94K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

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2SC3583-R35-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3583

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3583 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. Low-

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (DNP process) which is an NEC

proprietary new fabrication technique.

(Units: mm)

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

1.2 dB TYP.

13 dB TYP.

@f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Marking

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

250

I^EBO

V^EB= 1 V, I^E= 0

h^FE*

f^T

100

V^CE= 8 V, I^C= 20 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

GHz

C^re**

0.35

0.9

V^CB= 10 V, I^E= 0, f = 1.0 MHz

S^21e

V^CE= 8 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 8 V, I^E= 7 mA, f = 1.0 GHz

MAG

1.2

2.5

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R33/Q *

R33

R34/R *

R34

R35/S *

R35

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10360EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

12 3 4 5 6 7 8

中文翻译

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与2SC3583-R35-A相关器件

型号	品牌	获取价格	描述	数据表
2SC3583-R-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583S	NEC	获取价格	BJT
2SC3583-S	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-S-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-T1B-A	RENESAS	获取价格	2SC3583-T1B-A
2SC3583-T2B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585	RENESAS	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
2SC3585	TYSEMI	获取价格	NF 1.8 dB TYP. f = 2.0 GHz Ga 9 dB TYP.f = 2.0 GHz
2SC3585	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

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