2SC3583S

更新时间： 2024-11-22 23:20:15

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2SC3583S 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3583

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3583 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band. Low-

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (DNP process) which is an NEC

proprietary new fabrication technique.

(Units: mm)

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

1.2 dB TYP.

13 dB TYP.

@f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Marking

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

1.5

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

250

I^EBO

V^EB= 1 V, I^E= 0

h^FE*

f^T

100

V^CE= 8 V, I^C= 20 mA

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Maximum Available Gain

Noise Figure

GHz

C^re**

0.35

0.9

V^CB= 10 V, I^E= 0, f = 1.0 MHz

S^21e

V^CE= 8 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 8 V, I^E= 7 mA, f = 1.0 GHz

MAG

1.2

2.5

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R33/Q *

R33

R34/R *

R34

R35/S *

R35

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10360EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1984

12 3 4 5 6 7 8

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与2SC3583S相关器件

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2SC3583-S	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-S-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3583-T1B-A	RENESAS	获取价格	2SC3583-T1B-A
2SC3583-T2B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC3585	RENESAS	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
2SC3585	TYSEMI	获取价格	NF 1.8 dB TYP. f = 2.0 GHz Ga 9 dB TYP.f = 2.0 GHz
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2SC3585	KEXIN	获取价格	NPN Silicon Epitaxial Transistor
2SC3585(NE68033)	ETC	获取价格	Discrete