型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3583-T2B | NEC |
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RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC3585 | RENESAS |
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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR | |
2SC3585 | TYSEMI |
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NF 1.8 dB TYP. f = 2.0 GHz Ga 9 dB TYP.f = 2.0 GHz | |
2SC3585 | NEC |
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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR | |
2SC3585 | KEXIN |
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NPN Silicon Epitaxial Transistor | |
2SC3585(NE68033) | ETC |
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Discrete | |
2SC3585-A | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC3585Q | NEC |
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TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 | |
2SC3585-Q | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil | |
2SC3585-Q | RENESAS |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |