2SC3325-Y

更新时间： 2024-11-30 12:36:03

品牌	Logo	应用领域
东芝 - TOSHIBA		运算放大器
页数	文件大小	规格书
4页	144K
描述
Audio Frequency Low Power Amplifier Applications

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中文翻译

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数据手册

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2SC3325-Y 数据手册

2SC3325

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3325

Audio Frequency Low Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

Switching Applications

•

Excellent h

linearity: h

= 25 (min) (V = 6 V, I = 400 mA)

CE C

FE (2)

High voltage: V

= 50 V (min)

CEO

Complementary to 2SA1313

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

500

°C

JEDEC

JEITA

TO-236MOD

Base current

Collector power dissipation

Junction temperature

Storage temperature range

200

150

−55~150

SC-59

TOSHIBA

2-3F1A

stg

Weight: 0.012 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4

中文翻译

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