Datasheet > 2SC3326_07

2SC3326_07

更新时间： 2024-01-02 17:28:06

品牌	Logo	应用领域
东芝 - TOSHIBA		开关 PC
页数	文件大小	规格书
5页	512K
描述
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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数据手册

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2SC3326_07 数据手册

2SC3326

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3326

For Muting and Switching Applications

Unit: mm

•

High emitter-base voltage: V

= 25 V (min)

EBO

High reverse h : Reverse h

= 150 (typ.) (V

= −2 V, I = −4 mA)

CE C

Low on resistance: R

= 1 Ω (typ.) (I = 5 mA)

High DC current gain: h

Small package

= 200~1200

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

300

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

JEDEC

JEITA

TO-236MOD

125

stg

−55~125

SC-59

TOSHIBA

2-3F1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 0.012 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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