生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
最大集电极电流 (IC): | 0.3 A | 基于收集器的最大容量: | 7 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 0.15 W |
最大功率耗散 (Abs): | 0.15 W | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | VCEsat-Max: | 0.1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3326ATE85L | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3326B | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-59 | |
2SC3326-B | TOSHIBA |
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For Muting and Switching Applications | |
2SC3326-B(T5LKEHIF | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC3326-B(TE85L,F) | TOSHIBA |
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Trans GP BJT NPN 20V 0.3A 3-Pin S-Mini T/R | |
2SC3326-B,LF(T | TOSHIBA |
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暂无描述 | |
2SC3326BTE85R | TOSHIBA |
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TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3326TE85L | TOSHIBA |
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TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3326TE85R | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3327 | TOSHIBA |
获取价格 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) |