是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.44 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.3 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3326_07 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications | |
2SC3326A | TOSHIBA |
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For Muting and Switching Applications | |
2SC3326-A(T5LFT) | TOSHIBA |
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Small Signal Bipolar Transistor | |
2SC3326-A(TE85L,F) | TOSHIBA |
获取价格 |
Trans GP BJT NPN 20V 0.3A 3-Pin TO-236 T/R | |
2SC3326-ALF(T | TOSHIBA |
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Small Signal Bipolar Transistor | |
2SC3326ATE85L | TOSHIBA |
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TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3326B | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-59 | |
2SC3326-B | TOSHIBA |
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For Muting and Switching Applications | |
2SC3326-B(T5LKEHIF | TOSHIBA |
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Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon | |
2SC3326-B(TE85L,F) | TOSHIBA |
获取价格 |
Trans GP BJT NPN 20V 0.3A 3-Pin S-Mini T/R |