Datasheet > 2SC3326

2SC3326

更新时间： 2024-11-13 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	95K
描述
High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200.

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2SC3326 数据手册

Product specification

2SC3326

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High emitter-base voltage: V^EBO= 25 V (min).

High reverse hFE: Reverse h^FE= 150 (typ.) (V^CE= -2 V, I^C= -4 mA).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

Low on resistance: R^ON= 1

(typ.) (I^B= 5 mA).

High DC current gain: h^FE= 200 1200.

Small package.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

300

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

T^stg

-55 to +125

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