生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.71 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 0.2 W | 最大功率耗散 (Abs): | 0.2 W |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 300 MHz |
VCEsat-Max: | 0.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3325_07 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications | |
2SC3325O | TOSHIBA |
获取价格 |
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switc | |
2SC3325-O | TOSHIBA |
获取价格 |
暂无描述 | |
2SC3325-O(TE85L) | TOSHIBA |
获取价格 |
2SC3325-O(TE85L) | |
2SC3325-O(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,500MA I(C),SC-59 | |
2SC3325OTE85L | TOSHIBA |
获取价格 |
TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3325OTE85R | TOSHIBA |
获取价格 |
TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3325TE85L | TOSHIBA |
获取价格 |
TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3325TE85R | TOSHIBA |
获取价格 |
TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SC3325Y | TOSHIBA |
获取价格 |
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switc |