2SC3303O

更新时间： 2024-11-29 12:55:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	173K
描述
High Current Switching Applications

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中文翻译

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2SC3303O 数据手册

2SC3303

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3303

Industrial Applications

Unit: mm

High Current Switching Applications

DC-DC Converter Applications

•

Low collector saturation voltage: V

= 0.4 V (max) (I = 3 A)

CE (sat) C

High speed switching time: t

= 1.0 μs (typ.)

stg

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

100

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Pulse

1.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

−55 to 150

stg

TOSHIBA

2-7J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-02-05

12 3 4 5

中文翻译

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