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2SC3303Y(TO-251) PDF预览

2SC3303Y(TO-251)

更新时间: 2024-11-29 21:12:23
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 106K
描述
Transistor

2SC3303Y(TO-251) 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SC3303Y(TO-251) 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-251 Plastic-Encapsulate Transistors  
2SC3303 TRANSISTOR (NPN)  
TO – 251  
FEATURES  
1. BASE  
z
z
Low Collector Saturation Voltage  
High Speed Switching Time  
2. COLLECTOR  
3. EMITTER  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
Unit  
V
100  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
7
V
Collector Current  
5
1
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
W
RθJA  
Tj  
125  
/W  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
100  
80  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100µA,IE=0  
IC=10mA,IB=0  
V
IE=100µA,IC=0  
VCB=100V,IE=0  
VEB=7V,IC=0  
7
V
1
1
μA  
μA  
Emitter cut-off current  
IEBO  
hFE(1)  
VCE=1V, IC=1A  
VCE=1V, IC=3A  
IC=3A,IB=150mA  
IC=3A,IB=150mA  
VCB=10V,IE=0, f=1MHz  
VCE=4V,IC=1A,  
70  
40  
240  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector output capacitance  
Transition frequency  
VCE(sat)  
VBE(sat)  
Cob  
0.4  
1.2  
V
V
80  
20  
pF  
MHz  
fT  
CLASSIFICATION OF hFE(1)  
RANK  
O
Y
RANGE  
70-140  
120-240  
A,Dec,2010  

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