Datasheet > 2SC3306

2SC3306

更新时间： 2024-11-29 06:19:35

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	180K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC3306 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3306

DESCRIPTION

·With TO-3P(I) package

·Collector-emitter sustaining voltage-

_CEO(sus)=400V(Min)

·Fast switching times

APPLICATIONS

·Switching regulator and high voltage

switching applications

·High speed DC-DC converter applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3P(I)) and symbol

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

500

400

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector current-peak

Base current

Open base

Open collector

I_CM

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

100

150

-55~150

ꢀ

T_j

T_stg

ꢀ

12 3 4

中文翻译

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