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2SC3310 PDF预览

2SC3310

更新时间: 2024-11-29 07:30:43
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
5页 172K
描述
Silicon NPN Power Transistors

2SC3310 数据手册

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SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3310  
DESCRIPTION  
·With TO-220Fa package  
·High collector breakdown voltage  
·Excellent Switching times  
APPLICATIONS  
·Switching regulator  
·High speed DC-DC converter  
·High voltage switching  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
Collector-base voltage  
500  
V
V
V
A
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
Open base  
400  
Open collector  
7
5
ICM  
7
IB  
1
2
Ta=25ꢀ  
TC=25ꢀ  
PC  
Collector power dissipation  
W
30  
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  

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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-72
2SC3311AS ETC

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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SC-72
2SC3312 PANASONIC

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Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
2SC3312R ETC

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TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK
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TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK
2SC3312T ETC

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TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 100MA I(C) | SPAK