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2SC3303Y PDF预览

2SC3303Y

更新时间: 2024-09-21 12:55:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管
页数 文件大小 规格书
5页 173K
描述
High Current Switching Applications

2SC3303Y 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.45Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SC3303Y 数据手册

 浏览型号2SC3303Y的Datasheet PDF文件第2页浏览型号2SC3303Y的Datasheet PDF文件第3页浏览型号2SC3303Y的Datasheet PDF文件第4页浏览型号2SC3303Y的Datasheet PDF文件第5页 
2SC3303  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3303  
Industrial Applications  
Unit: mm  
High Current Switching Applications  
DC-DC Converter Applications  
Low collector saturation voltage: V  
= 0.4 V (max) (I = 3 A)  
CE (sat) C  
High speed switching time: t  
= 1.0 μs (typ.)  
stg  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
100  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
80  
7
DC  
I
5
C
Collector current  
Base current  
A
A
Pulse  
I
8
CP  
I
1
1.0  
B
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
20  
JEDEC  
JEITA  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
TOSHIBA  
2-7J1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.36 g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2010-02-05  

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