Datasheet > 2SC3307_06

2SC3307_06

更新时间： 2024-11-29 04:25:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
5页	172K
描述
Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications

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2SC3307_06 数据手册

2SC3307

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC3307

High-Speed and High-Voltage Switching Applications

Industrial Applications

Unit: mm

Switching Regulator Applications

High-Speed DC-DC Converter Applications

•

Excellent switching times: t = 1.0 μs (max), t = 1.0 μs (max)

(I = 5 A)

High collector breakdown voltage: V

= 800 V

CEO

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

900

800

Collector-emitter voltage

Emitter-base voltage

Collector current

Pulse

JEDEC

JEITA

―

Base current

Collector power dissipation

(Tc = 25°C)

150

TOSHIBA

2-21F1A

Junction temperature

Storage temperature range

150

°C

Weight: 9.75 g (typ.)

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4 5

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