2SC3313

更新时间： 2024-11-28 22:52:39

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	40K
描述
Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)

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中文翻译

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2SC3313 数据手册

Transistor

2SC3313

Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

●

Optimum for RF amplification of FM/AM radios.

Absolute Maximum Ratings (Ta=25˚C)

marking

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.27 1.27

2.54±0.15

˚C

1:Emitter

2:Collector

3:Base

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

EIAJ:SC–72

New S Type Package

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

V_CE= 10V, I_C= 1mA

Forward current transfer ratio

h_FE

250

1.6

Common emitter reverse transfer capacitance C_re

V_CE= 10V, I_C= 1mA, f = 10.7MHz

V_CB= 10V, I_E= –1mA, f = 2MHz

V_CB= 10V, I_E= –1mA, f = 200MHz

Ω

Reverse transfer impedance

Transition frequency

Z_rb

f_T

150

250

MHz

^*h_FERank classification

Rank

h_FE

70 ~ 160

110 ~ 250

中文翻译

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