Datasheet > 2SC3314C

2SC3314C

更新时间： 2024-11-28 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	58K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| SC-72

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中文翻译

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数据手册

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2SC3314C 数据手册

Transistor

2SC3314

Silicon NPN epitaxial planer type

For high-frequency amplification

Complementary to 2SA1323

Unit: mm

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency f_T.

marking

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1.27 1.27

2.54±0.15

˚C

1:Emitter

2:Collector

3:Base

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

V_CBO

Conditions

min

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

I_C= 10µA, I_E= 0

V_CEO

V_EBO

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 10V, I_C= 1mA

220

Collector to emitter saturation voltage V_CE(sat)

I_C= 10mA, I_B= 1mA

V_CE= 10V, I_C= 1mA

0.1

0.7

300

2.8

Base to emitter voltage

Transition frequency

Noise figure

V_BE

f_T

V_CB= 10V, I_E= –1mA, f = 200MHz

V_CB= 10V, I_E= –1mA, f = 5MHz

V_CE= 10V, I_C= 1mA, f = 10.7MHz

V_CB= 10V, I_E= –1mA, f = 2MHz

150

MHz

4.0

1.5

Common emitter reverse transfer capacitance C_re

Reverse transfer impedance

Z_rb

Ω

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

12 3 4

中文翻译

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