2SC3318

更新时间： 2024-11-29 05:57:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	179K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3318 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3318

DESCRIPTION

·With TO-3PN package

·High voltage ,high speed switching

·High reliability

APPLICATIONS

·Switching regulators

·Ultrasonic generators

·High frequency inverters

·General purpose power amplifiers

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

500

400

UNIT

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th (j-c)}

Thermal resistance from junction to case

1.55

℃/W

12 3 4

中文翻译

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