Datasheet > 2SC3312R

2SC3312R

更新时间： 2024-11-28 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	50K
描述
TRANSISTOR \| BJT \| NPN \| 55V V(BR)CEO \| 100MA I(C) \| SPAK

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中文翻译

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数据手册

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2SC3312R 数据手册

Transistor

2SC3312

Silicon NPN epitaxial planer type

For low-frequency and low-noise amplification

Complementary to 2SA1310

Unit: mm

4.0±0.2

Features

Optimum for high-density mounting.

■

●

Allowing supply with the radial taping.

●

Low noise voltage NV.

Absolute Maximum Ratings (Ta=25˚C)

marking

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27 1.27

2.54±0.15

200

˚C

1:Emitter

2:Collector

3:Base

I_C

100

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

300

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

V_CB= 20V, I_E= 0

V_CE= 20V, I_B= 0

_C= 10µA, I_E= 0

Collector cutoff current

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 5V, I_C= 2mA

I_C= 100mA, I_B= 10mA

V_CE= 1V, I_C= 30mA

180

700

Collector to emitter saturation voltage V_CE(sat)

Base to emitter voltage

Transition frequency

V_BE

f_T

V_CB= 5V, I_E= –2mA, f = 200MHz

V_CE= 10V, I_C= 1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

200

MHz

Noise voltage

150

^*h_FERank classification

Rank

h_FE

180 ~ 360

260 ~ 520

360 ~ 700

12 3

中文翻译

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与2SC3312R相关器件

型号	品牌	获取价格	描述	数据表
2SC3312S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 55V V(BR)CEO \| 100MA I(C) \| SPAK
2SC3312T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 55V V(BR)CEO \| 100MA I(C) \| SPAK
2SC3313	PANASONIC	获取价格	Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)
2SC3313B	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1,
2SC3313C	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, NS-B1,
2SC3314	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC3314B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| SC-72
2SC3314C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 300MA I(C) \| SC-72
2SC3315	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For high-frequency amplification)
2SC3315C	PANASONIC	获取价格	RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Sili