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2SC3307 PDF预览

2SC3307

更新时间: 2024-11-29 06:17:07
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
4页 238K
描述
Silicon NPN Power Transistors

2SC3307 数据手册

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SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3307  
DESCRIPTION  
·With TO-3PL package  
·Excellent switching times  
: tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A)  
·High collector breakdown voltage : VCEO=800V  
APPLICATIONS  
·High speed,high voltage switching applications  
·Switching regulator applications  
·High speed DC-DC converter applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PL) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
900  
800  
7
UNIT  
V
Open base  
V
Open collector  
V
10  
A
ICM  
Collector current-peak  
Base current  
15  
A
IB  
3
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
150  
150  
-55~150  
W
Tj  
Tstg  

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