Datasheet > 2SC3303O(TO-251)

2SC3303O(TO-251)

更新时间： 2024-09-22 06:08:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	106K
描述
Transistor

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中文翻译

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数据手册

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2SC3303O(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251 Plastic-Encapsulate Transistors

2SC3303 TRANSISTOR (NPN)

TO – 251

FEATURES

1. BASE

Low Collector Saturation Voltage

High Speed Switching Time

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

100

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

125

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100µA,I_E=0

I_C=10mA,I_B=0

I_E=100µA,I_C=0

V_CB=100V,I_E=0

V_EB=7V,I_C=0

μA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=1V, I_C=1A

V_CE=1V, I_C=3A

I_C=3A,I_B=150mA

V_CB=10V,I_E=0, f=1MHz

V_CE=4V,I_C=1A,

240

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

V_BE(sat)

C_ob

0.4

1.2

MHz

f_T

CLASSIFICATION OF h_FE(1)

RANK

RANGE

70-140

120-240

A,Dec,2010

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