Datasheet > 2SC3120_07

2SC3120_07

更新时间： 2024-11-24 04:25:59

品牌	Logo	应用领域
东芝 - TOSHIBA		电视
页数	文件大小	规格书
5页	668K
描述
Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications

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中文翻译

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数据手册

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2SC3120_07 数据手册

2SC3120

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC3120

TV Tuner, UHF Mixer Applications

Unit: mm

VHF~UHF Band RF Amplifier Applications

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 30 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

⎯

0.1

1.0

⎯

μA

CBO

= 2 V, I = 0

EBO

(BR) CEO

= 1 mA, I = 0

⎯

= 10 V, I = 5 mA

100

0.6

2400

200

0.9

⎯

Reverse transfer capacitance

Transition frequency

Conversion gain

= 10 V, I = 0, f = 1 MHz

⎯

MHz

= 10 V, I = 2 mA

1500

⎯

= 10 V, I = 2 mA, f = 800 MHz,

= 830 MHz (0dBm) (Figure 1)

Noise figure

⎯

2007-11-01

12 3 4 5

中文翻译

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