5秒后页面跳转
2SC3124_07 PDF预览

2SC3124_07

更新时间: 2024-11-24 04:25:59
品牌 Logo 应用领域
东芝 - TOSHIBA 振荡器电视
页数 文件大小 规格书
4页 546K
描述
Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator Applications

2SC3124_07 数据手册

 浏览型号2SC3124_07的Datasheet PDF文件第2页浏览型号2SC3124_07的Datasheet PDF文件第3页浏览型号2SC3124_07的Datasheet PDF文件第4页 
2SC3124  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC3124  
TV Tuner, VHF Oscillator Applications  
Unit: mm  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
30  
15  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
3
V
I
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
25  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
125  
55~125  
C
T
j
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
SC-59  
2-3F1A  
TOSHIBA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 15 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
0.1  
1.0  
μA  
μA  
V
CBO  
CB  
EB  
E
I
= 3 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
DC current gain  
V
I
= 1 mA, I = 0  
15  
40  
650  
C
B
h
V
V
V
V
= 3 V, I = 8 mA  
100  
1100  
0.9  
7
200  
FE  
CE  
CE  
CB  
CB  
C
Transition frequency  
f
= 10 V, I = 8 mA  
MHz  
pF  
T
C
Collector output capacitance  
Collector-base time constant  
C
= 10 V, I = 0, f = 1 MHz  
1.3  
12  
ob  
E
C
rbb’  
= 10 V, I = 8 mA, f = 30 MHz  
ps  
c
C
Marking  
1
2007-11-01  

与2SC3124_07相关器件

型号 品牌 获取价格 描述 数据表
2SC3124TE85L TOSHIBA

获取价格

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal
2SC3124TE85R TOSHIBA

获取价格

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal
2SC3125 KEXIN

获取价格

Silicon NPN Epitaxial Planar Type
2SC3125 ISC

获取价格

isc Silicon NPN RF Transistor
2SC3125 TOSHIBA

获取价格

NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE RF AMPLIFIER APPLICATIONS)
2SC3125 TYSEMI

获取价格

Good Lineality of fT Collector-base voltage VCBO 30 V
2SC3125 LGE

获取价格

双极型晶体管
2SC3125 HC

获取价格

SOT-23
2SC3125_07 TOSHIBA

获取价格

Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications
2SC3125TE85L TOSHIBA

获取价格

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal