Datasheet > 2SC3127

2SC3127

更新时间： 2024-11-24 06:19:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
6页	178K
描述
isc Silicon NPN RF Transistor

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中文翻译

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技术参数
数据手册

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2SC3127 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

2SC3127 数据手册

INCHANGE Semiconductor

iscRF Product Specification

isc Silicon NPN RF Transistor

2SC3127

DESCRIPTION

·Low Noise and High Gain

NF = 2.2 dB TYP. @V_CE= 5 V, I_C= 5 mA, f = 900 MHz

PG = 10.5 dB TYP. @V_CE= 5 V, I_C= 20 mA, f = 900 MHz

APPLICATIONS

·Designed for use in low-noise and small signal amplifiers

from VHF ~ UHF band.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Power Dissipation

@T_C=25℃

P_C

0.15

150

T_J

Junction Temperature

℃

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

12 3 4 5 6

中文翻译

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2SC3128RR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92
2SC3128TR	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3128TZ	HITACHI	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92