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2SC3123

更新时间: 2024-11-01 06:21:59
品牌 Logo 应用领域
科信 - KEXIN /
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描述
Silicon NPN Epitaxial

2SC3123 数据手册

  
SMD Type  
Transistors  
Silicon NPN Epitaxial  
2SC3123  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High Conversion Gain :Gce=23dB(TYP.)  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
30  
20  
V
3
50  
V
mA  
mA  
mW  
Base current  
IB  
25  
Collector Power Dissipation  
Junction temperature  
Storage temperature Range  
PC  
150  
Tj  
125  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Collector cut-off current  
Emitter cut-off current  
Collector-emitter breakdown voltage  
DC current gain  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
100  
Unit  
nA  
nA  
V
VCB = 25V, IE = 0  
VEB = 3V, IC = 0  
IEBO  
1000  
V(BR)CEO IC=1mA,IB=0  
20  
40  
hFE  
Cre  
fT  
VCE = 10 V, IC = 5mA  
150  
0.4  
300  
0.5  
Reverse Transfer Capacitance  
Transition Frequency  
Conversion Gain  
VCB=10V,IE=0,f=1MHz  
VCE = 10 V, IC = 5mA  
pF  
MHz  
dB  
900 1400  
Gce  
NF  
20  
23  
VCC=12V,fL=260MHz,f=200MHZ  
Noise Figure  
3.8  
5.5  
dB  
Marking  
Marking  
HE  
1
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