Datasheet > 2SC3123

2SC3123

更新时间： 2024-11-24 06:21:59

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描述
Silicon NPN Epitaxial

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中文翻译

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数据手册

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2SC3123 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC3123

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High Conversion Gain :Gce=23dB(TYP.)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Base current

I^B

Collector Power Dissipation

Junction temperature

Storage temperature Range

P^C

150

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Symbol

I^CBO

Testconditons

Min

Typ

Max

100

Unit

VCB = 25V, IE = 0

VEB = 3V, IC = 0

I^EBO

1000

V^(BR)CEOIC=1mA,IB=0

h^FE

C^re

f^T

VCE = 10 V, IC = 5mA

150

0.4

300

0.5

Reverse Transfer Capacitance

Transition Frequency

Conversion Gain

VCB=10V,IE=0,f=1MHz

VCE = 10 V, IC = 5mA

MHz

900 1400

G^ce

V^CC=12V,fL=260MHz,f=200MHZ

Noise Figure

3.8

5.5

Marking

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