Datasheet > 2SC3124

2SC3124

更新时间： 2024-11-24 06:16:51

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描述
Silicon NPN Epitaxial

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中文翻译

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数据手册

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2SC3124 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC3124

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Base current

I^B

Collector Power Dissipation

Junction temperature

Storage temperature Range

P^C

150

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

100

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

VCB = 15V, IE = 0

VEB = 3V, IC = 0

1.0

Collector-emitter breakdown voltage

DC current gain

V^(BR)CEOIC=1mA,IB=0

h^FEVCE = 3 V, IC = 8mA

f^T

200

Transition Frequency

VCE = 10 V, IC = 8mA

V^CC=10V,IE=0,f=1MHz

650 1100

MHz

Collector Output Capacitance

Collector-BaseTime Constant

Cob

0.9

1.3

C^c.rbb2VCB=10V,IC=8mA,f=30MHz

Marking

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