生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.63 |
最大集电极电流 (IC): | 0.02 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最小功率增益 (Gp): | 15 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 550 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2714-RTE85R | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC2714Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20MA I(C) | SC-59 | |
2SC2714-Y | TOSHIBA |
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High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications | |
2SC2714Y(TE85L) | TOSHIBA |
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TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-23 | |
2SC2714-Y-HF | KEXIN |
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NPN Transistors | |
2SC2714YTE85L | TOSHIBA |
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High Frequency Amplifier Applications | |
2SC2714YTE85R | TOSHIBA |
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暂无描述 | |
2SC2714-YTE85R | TOSHIBA |
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TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC2715 | SECOS |
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NPN Plastic-Encapsulate Transistor | |
2SC2715 | HTSEMI |
获取价格 |
TRANSISTOR (NPN) |