Datasheet > 2SC2715

2SC2715

更新时间： 2023-12-06 20:11:50

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
2页	51K
描述
小信号晶体管

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2SC2715 数据手册

2SC2715

NPN Silicon Epitaxial Planar Transistor

for high frequency amplifier applications

for FM IF, OSC stage and AM CONV. IF stage

The transistor is subdivided into three groups, R,

O and Y, according to its DC current gain.

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Base Current

I_B

Power Dissipation

P_tot

300

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 12 V, I_C= 2 mA

Current Gain Group

h_FE

120

140

240

Collector Base Cutoff Current

at V_CB= 35 V

Emitter Base Cutoff Current

at V_EB= 4 V

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

Base Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

Current Gain Bandwidth Product

at V_CE= 10 V, I_C= 1 mA

Output Capacitance

I_CBO

I_EBO

0.1

0.4

µA

V_CE(sat)

V_BE(sat)

f_T

100

400

3.2

MHz

C_ob

at V_CB= 10 V, f = 1 MHz

Power Gain

at V_CE= 6 V, -I_E= 1 mA, f = 10.7 MHz

G_pe

Dated: 20/08/2016 Rev：01

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