2SC2714YTE85R

更新时间： 2024-09-21 13:04:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
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数据手册

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2SC2714YTE85R 数据手册

2SC2714

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)

2SC2714

High Frequency Amplifier Applications

FM, RF, MIX, IF Amplifier Applications

Unit: mm

•

Small reverse transfer capacitance: C = 0.7 pF (typ.)

Low noise figure: NF = 2.5dB (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

S-MINI

125

JEDEC

JEITA

TO-236

stg

−55 to 125

SC-59

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

TOSHIBA

2-3F1A

Weight: 12 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 40 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

0.5

μA

CBO

= 4 V, I = 0

EBO

(Note)

DC current gain

= 6 V, I = 1 mA

⎯

200

⎯

Reverse transfer capacitance

Transition frequency

Collector-base time constant

Noise figure

= 6 V, f = 1 MHz

⎯

0.70

550

⎯

MHz

= 6 V, I = 1 mA

rbb’

= 6 V, I = −1 mA, f = 30 MHz

5.0

⎯

･

2.5

= 6 V, I = −1 mA, f = 100 MHz,

Figure 1

Power gain

Note: h classification R: 40 to 80, O: 70 to 140, Y: 100 to 200

2010-08-24

12 3 4 5 6 7 8

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