Datasheet > 2SC2715

2SC2715

更新时间： 2024-09-22 14:53:11

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1079K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SC2715 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.05	DC current gain - Min：	40
DC current gain - Max：	240	Transition frequency：	100
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

2SC2715 数据手册

2SC2715

Silicon Epitaxial Planar Transistor

SOT-23

Min

Dim

Max

3.10

1.50

FEATURES

2.70

High power gain

1.10

Recommended for FM IF,OSC stage

and AM CONV.IF stage

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

APPLICATIONS

High Frequency Amplifier Applications

0.1 Typical

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-23

2SC2715

RR1/RO1/RY1

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Base current

150

℃

I_B

Collector Dissipation

P_C

Junction and Storage Temperature

T_j,T_stg

-55 to +125

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP MAX UNIT

Collector cut-off current

Emitter cut-off current

DC current gain

I_CBO

I_EBO

h_FE

V_CB=35V,I_E=0

V_EB=4V,I_C=0

0.1

240

0.4

μA

V_CE=12V,I_C=2mA

I_C=10mA, I_B=1mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

f_T

I_C=10mA, I_B=1mA

Transition frequency

V_CE=10V, I_C= 1mA

V_CB=10V, I_E=0,f=1MHz

100

400

3.2

MHz

Collector-base output capacitance

C_ob

2.0

V_CE=10V,

Collector-base time constant

Power Gain

C_C.rbb

G_pe

I_E=-1mA,f=30MHz

V_CC=6V,

I_E=-1mA,f=10.7MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

40-80

RR1

70-140

RO1

120-240

RY1

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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