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2SC2712-BL(T5LCLAF PDF预览

2SC2712-BL(T5LCLAF

更新时间: 2024-11-25 14:48:39
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 308K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SC2712-BL(T5LCLAF 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.59
其他特性:LOW NOISE最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):350JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SC2712-BL(T5LCLAF 数据手册

 浏览型号2SC2712-BL(T5LCLAF的Datasheet PDF文件第2页浏览型号2SC2712-BL(T5LCLAF的Datasheet PDF文件第3页浏览型号2SC2712-BL(T5LCLAF的Datasheet PDF文件第4页浏览型号2SC2712-BL(T5LCLAF的Datasheet PDF文件第5页 
2SC2712  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC2712  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
High voltage and high current: V  
= 50 V, I = 150 mA (max)  
CEO C  
Excellent h  
linearity: h  
(I = 0.1 mA)/ h (I = 2 mA)  
C FE C  
FE  
FE  
= 0.95 (typ.)  
= 70 to 700  
High h  
h
FE: FE  
Low noise: NF = 1dB (typ.), 10dB (max)  
Complementary to 2SA1162  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5
V
I
150  
mA  
mA  
mW  
°C  
°C  
C
JEDEC  
JEITA  
TO-236MOD  
Base current  
I
30  
B
SC-59  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
150  
C
TOSHIBA  
2-3F1A  
T
j
125  
Weight: 0.012 g (typ.)  
T
stg  
55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Start of commercial production  
1982-10  
1
2014-03-01  

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