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2SC2712-BL-TP PDF预览

2SC2712-BL-TP

更新时间: 2024-11-18 13:04:15
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 240K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SC2712-BL-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):350JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SC2712-BL-TP 数据手册

 浏览型号2SC2712-BL-TP的Datasheet PDF文件第2页浏览型号2SC2712-BL-TP的Datasheet PDF文件第3页 
2SC2712-O  
2SC2712-Y  
2SC2712-GR  
2SC2712-BL  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
NPN  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Complementary to 2SA1162  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Plastic-Encapsulate  
Transistors  
·
·
SOT-23  
Maximum Ratings  
A
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
60  
5.0  
150  
Unit  
V
V
D
C
V
B
C
mA  
mW  
R
PC  
TJ  
Collector power dissipation  
Junction Temperature  
150  
-55 to +150  
E
B
F
E
TSTG  
Storage Temperature  
-55 to +150  
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
H
G
J
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
K
ICBO  
IEBO  
Collector Cutoff Current  
(VCB=60Vdc,IE=0)  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
---  
---  
---  
---  
0.1  
0.1  
µA  
µA  
DIMENSIONS  
INCHES  
MM  
DIM  
A
MIN  
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
ON CHARACTERISTICS  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
B
V(BR)CEO  
Collector-Emitter Breakdown  
Voltage  
(IC=1mA, IB=0)  
V
C
D
E
50  
---  
---  
V(BR)CBO  
V(BR)EBO  
hF  
Collector-Base Breakdown Voltage  
(IC=100µA, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=100µA, IC=0)  
V
V
F
60  
5.0  
70  
---  
---  
---  
---  
---  
G
H
J
.085  
.37  
K
DC Current Gain*  
---  
700  
0.25  
3.5  
---  
---  
(IC=2mAdc, VCE=6.0Vdc)  
Collector Saturation Voltage*  
(IC=-100mAdc, IB=10mAdc)  
Output Capacitance  
(VCB=10V, IE=0, f=1MHz)  
Gain Bandwidth product  
(VCE=10Vdc, IC=1mAdc)  
Noise Figure  
Suggested Solder  
Pad Layout  
VCE(sat)  
Cob  
fT  
0.1  
2.0  
---  
V
.031  
.800  
---  
pF  
.035  
.900  
80  
MHz  
NF  
.079  
2.000  
inches  
mm  
V
CE=6V, IC=0.1mA, f=1KHz, Rg=10K  
---  
1.0  
10  
=)  
dB  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
O
70-140  
LO  
Y
120-240  
LY  
GR  
200-400  
LG  
BL  
350-700  
LL  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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