Datasheet > 2SC2712-G

2SC2712-G

更新时间： 2024-11-19 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1081K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC2712-G 数据手册

SMD Type

Transistors

NPN Transistors

2SC2712

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High voltage and high current: VCEO = 50 V, IC = 150 mA (max)

Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

High hFE: hFE = 70 700

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

Low noise: NF = 1dB (typ.), 10dB (max)

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

150

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

CEO

EBO

C= 0

CBO

EBO

CB= 60 V , I

^EB= 5V , I

= 0

100

0.25

1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=100 mA, I

=10mA

=100 mA, I

hFE

^CE= 6V, I

C= 2mA

700

CE = 6 V, I

C = 0.1 mA ,

Noise figure

f = 1KHz,RG=10KΩ

Collector output capacitance

Transition frequency

Cob

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

3.5

= 1mA

MHz

hFE Classification

Type

Range

Marking

2SC2712-O

70-140

2SC2712-Y

120-240

2SC2712-G

200-400

2SC2712-L

350-700

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