2SC2712-GR

更新时间： 2024-01-16 23:43:00

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	240K
描述
NPN Plastic-Encapsulate Transistors

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中文翻译

获取价格

数据手册

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2SC2712-GR 数据手册

2SC2712-O

2SC2712-Y

2SC2712-GR

2SC2712-BL

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Complementary to 2SA1162

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Plastic-Encapsulate

Transistors

•

SOT-23

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

5.0

150

Unit

P_C

T_J

Collector power dissipation

Junction Temperature

150

-55 to +150

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

I_CBO

I_EBO

Collector Cutoff Current

(V_CB=60Vdc,I_E=0)

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

---

0.1

µA

DIMENSIONS

INCHES

DIM

MIN

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

ON CHARACTERISTICS

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

V_(BR)CEO

Collector-Emitter Breakdown

Voltage

(I_C=1mA, I_B=0)

---

V_(BR)CBO

V_(BR)EBO

h_F

Collector-Base Breakdown Voltage

(I_C=100µA, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=100µA, I_C=0)

5.0

---

.085

.37

DC Current Gain*

---

700

0.25

3.5

---

(I_C=2mAdc, V_CE=6.0Vdc)

Collector Saturation Voltage*

(I_C=-100mAdc, I_B=10mAdc)

Output Capacitance

(V_CB=10V, I_E=0, f=1MHz)

Gain Bandwidth product

(V_CE=10Vdc, I_C=1mAdc)

Noise Figure

Suggested Solder

Pad Layout

V_CE(sat)

Cob

f_T

0.1

2.0

---

.031

.800

---

.035

.900

MHz

.079

2.000

inches

_CE=6V, I_C=0.1mA, f=1KHz, R_g=10K

---

1.0

CLASSIFICATION OF h^FE

Rank

Range

Marking

70-140

120-240

200-400

350-700

.037

.950

.037

.950

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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与2SC2712-GR相关器件

型号	品牌	获取价格	描述	数据表
2SC2712-GR(F)	TOSHIBA	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2712-GR(T5L,F,T)	TOSHIBA	获取价格	TRANS NPN 50V 150MA S-MINI
2SC2712-GR(T5LFD,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2712-GR(T5LHITF	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2712-GR(T5LPEWF	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2712-GR(T5LTYDF	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SC2712-GR(TE85L,F	TOSHIBA	获取价格	Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R
2SC2712-GR(TLSPFT)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23
2SC2712-GR,LF(B	TOSHIBA	获取价格	Small Signal Bipolar Transistor
2SC2712-GR,LF(T	TOSHIBA	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

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