Datasheet > 2SC2712-GR(T5LFD,F

2SC2712-GR(T5LFD,F

更新时间： 2024-11-19 08:12:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	308K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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2SC2712-GR(T5LFD,F 数据手册

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2SC2712

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2712

Audio Frequency General Purpose Amplifier Applications

Unit: mm

•

High voltage and high current: V

= 50 V, I = 150 mA (max)

CEO C

Excellent h

linearity: h

(I = 0.1 mA)/ h (I = 2 mA)

C FE C

= 0.95 (typ.)

= 70 to 700

•

High h

FE: FE

Low noise: NF = 1dB (typ.), 10dB (max)

Complementary to 2SA1162

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

150

°C

JEDEC

JEITA

TO-236MOD

Base current

SC-59

Collector power dissipation

Junction temperature

Storage temperature range

150

TOSHIBA

2-3F1A

125

Weight: 0.012 g (typ.)

stg

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Start of commercial production

1982-10

2014-03-01

12 3 4 5

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