5秒后页面跳转
2SC2712GT1G PDF预览

2SC2712GT1G

更新时间: 2024-02-05 06:18:04
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 124K
描述
Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz

2SC2712GT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SC2712GT1G 数据手册

 浏览型号2SC2712GT1G的Datasheet PDF文件第2页浏览型号2SC2712GT1G的Datasheet PDF文件第3页 
2SC2712GT1G  
Medium Frequency  
NPN Amplifier Transistor  
50 V, 200 mA, 80 MHz  
The 2SC2712GT1G is designed for low to medium frequency  
applications such as wireless toys. The targeted design enables  
improved performance versus the industry standard MMBT3904* in  
some key parametric specifications.  
http://onsemi.com  
COLLECTOR  
3
Features  
Lower V  
*
CE(sat)  
Higher Gain (h )*  
fe  
Higher Breakdown Voltage Rating*  
Moisture Sensitivity Level: 1  
This is a PbFree Device  
2
1
BASE  
EMITTER  
Benefits  
3
Longer Battery Life  
Improved Performance Through Targeted Design  
SC59  
CASE 318D  
STYLE 1  
2
1
MAXIMUM RATINGS (T = 25°C)  
A
MARKING DIAGRAMS  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current Continuous  
Collector Current Peak  
Base Current  
Symbol  
Value  
60  
Unit  
Vdc  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
SCG  
M
V
V
50  
Vdc  
5.0  
150  
200  
30  
Vdc  
I
C
mAdc  
mAdc  
mAdc  
SCG = Specific Date Code  
= Date Code  
I
M
C(P)  
I
B
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
200  
Unit  
mW  
°C  
Device  
2SC2712GT1G  
Package  
Shipping  
Power Dissipation  
P
D
SC59  
3000/Tape & Reel  
Junction Temperature  
Storage Temperature  
T
J
150  
(PbFree)  
T
stg  
55 to +150  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*Specifications compared to MMBT3904.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 2  
2SC2712GT1/D  

2SC2712GT1G 替代型号

型号 品牌 替代类型 描述 数据表
2SC2712-GR-TP MCC

功能相似

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SC2712-GR(TE85L,F TOSHIBA

功能相似

Trans GP BJT NPN 50V 0.15A 3-Pin S-Mini T/R
2SC2712-GR(F) TOSHIBA

功能相似

150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

与2SC2712GT1G相关器件

型号 品牌 获取价格 描述 数据表
2SC2712G-X-AE3-R UTC

获取价格

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
2SC2712G-X-AL3-R UTC

获取价格

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
2SC2712-HF_15 KEXIN

获取价格

NPN Transistors
2SC2712L UTC

获取价格

Transistor
2SC2712-L KEXIN

获取价格

NPN Transistors
2SC2712-L-AE3-R UTC

获取价格

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
2SC2712-L-AL3-R UTC

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-32
2SC2712L-G-AE3-R UTC

获取价格

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
2SC2712-L-HF KEXIN

获取价格

NPN Transistors
2SC2712L-L-AE3-R UTC

获取价格

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR