Datasheet > 2SC2148

2SC2148

更新时间： 2024-11-19 22:52:39

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管微波
页数	文件大小	规格书
8页	55K
描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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2SC2148 数据手册

DATA SHEET

SILICON TRANSISTORS

2SC2148, 2SC2149

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SC2148, 2SC2149 are economical microwave transistors

encapsulated into new hermetic stripline packages, "micro X".

These are designed for small signal amplifier, low noise amplifier,

and oscillator applications in the L to C band, and CML circuit use.

PACKAGE DIMENSIONS

(Unit : mm)

FEATURES

4.0 MIN.

2SC2148 NF: 2.1 dB TYP. @f = 500 MHz

2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz

45°

0.5±0.05

2.55±0.2

2.1

1. Emitter

2. Collector

3. Emitter

4. Base

Derating curves of the 2SC2148, 2SC2149.

The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage

temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and

thermal resistance mentioned on these derating curves.

The information in this document is subject to change without notice.

Document No. P11809EJ2V0DS00 (2nd edition)

(Previous No. TC-1428)

Date Published August 1996 P

Printed in Japan

1981

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SC2149	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
2SC2149	NJSEMI	获取价格	SILICON TRANSISTR
2SC2150	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 11V V(BR)CEO \| 30MA I(C) \| SOT-173
2SC2151	ISC	获取价格	Silicon NPN Power Transistors
2SC2151	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC2166	NJSEMI	获取价格	Silicon NPN Transistor Final RF Power Output
2SC2166	MITSUBISHI	获取价格	NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
2SC2166	JMNIC	获取价格	Silicon NPN Power Transistor
2SC2166_15	JMNIC	获取价格	Silicon NPN Power Transistor
2SC2166_2014	JMNIC	获取价格	Silicon NPN Power Transistor