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2SC2188 PDF预览

2SC2188

更新时间: 2024-11-23 22:52:39
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管电视放大器
页数 文件大小 规格书
2页 41K
描述
Silicon NPN epitaxial planer type(For intermediate frequency amplification of TV image)

2SC2188 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:135 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):500 MHzBase Number Matches:1

2SC2188 数据手册

 浏览型号2SC2188的Datasheet PDF文件第2页 
Transistor  
2SC2188  
Silicon NPN epitaxial planer type  
For intermediate frequency amplification of TV image  
Unit: mm  
6.9±0.1  
2.5±0.1  
1.5  
1.5 R0.9  
1.0  
R0.9  
Features  
High transition frequency fT.  
Satisfactory linearity of forward current transfer ratio hFE  
.
R0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
0.85  
0.55±0.1  
0.45±0.05  
Absolute Maximum Ratings (Ta=25˚C)  
3
2
1
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
45  
35  
V
2.5  
2.5  
4
50  
V
mA  
mW  
˚C  
1:Base  
2:Collector  
3:Emitter  
EIAJ:SC–71  
M Type Mold Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
600  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICEO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCE = 20V, IB = 0  
10  
VCBO  
VCEO  
VEBO  
hFE  
IC = 10µA, IE = 0  
45  
35  
4
IC = 1mA, IB = 0  
V
IE = 10µA, IC = 0  
V
Forward current transfer ratio  
VCB = 10V, IE = –10mA  
IC = 20mA, IB = 2mA  
20  
50  
500  
18  
100  
0.5  
Collector to emitter saturation voltage VCE(sat)  
Transition frequency fT  
V
MHz  
pF  
VCB = 10V, IE = –10mA, f = 100MHz  
VCE = 10V, IC = 1mA  
300  
Common emitter reverse transfer capacitance Cre  
1.5  
Power gain  
PG  
VCB = 10V, IE = –10mA, f = 58MHz  
dB  
1

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