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2SC2209 PDF预览

2SC2209

更新时间: 2024-11-20 06:16:03
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2页 228K
描述
isc Silicon NPN Power Transistor

2SC2209 数据手册

 浏览型号2SC2209的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC2209  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 40V(Min)  
·High Collector Power Dissipation  
·Complement to Type 2SA963  
APPLICATIONS  
·Designed for low frequency power amplification.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
50  
40  
V
5
V
Collector Current-Continuous  
Collector Current-Peak  
1.5  
A
ICM  
3
A
Collector Power Dissipation  
@ TC=25℃  
PC  
10  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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TRANSISTOR (NPN)