Datasheet > 2SC2209R

2SC2209R

更新时间： 2024-11-19 23:20:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	75K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 1.5A I(C) \| TO-126

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中文翻译

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2SC2209R 数据手册

Power Transistors

2SC2209

Silicon NPN epitaxial planar type

Unit: mm

+0.5

–0.1

For low-frequency power amplification

Complementary to 2SA0963 (2SA963)

7.5

2.9 0.2

120

I Features

•

Large collector power dissipation P_C

Output of 5 W can be obtained by a complementary pair with

2SA0963

I Absolute Maximum Ratings T_C= 25°C

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

0.5 0.1

1.26 0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1 : Emitter

2 : Collector

3 : Base

1.5

TO-126A Package

I_C

Collector power dissipation (T_C= 25°C)

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

Collector cutoff current

V_CB= 20 V, I_E= 0

V_CE= 10 V, I_B= 0

V_EB= 5 V, I_C= 0

I_C= 1 mA, I_E= 0

I_CEO

100

Emitter cutoff current

I_EBO

Collector to base voltage

V_CBO

V_CEO

h_FE

Collector to emitter voltage

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

I_C= 2 mA, I_B= 0

V_CE= 5 V, I_C= 1 A

I_C= 1.5 A, I_B= 150 mA

I_C= 2 A, I_B= 0.2 A

220

V_CE(sat)

V_BE(sat)

f_T

1.5

V_CB= 5 V, I_E= − 0.5 A, f = 200 MHz

150

MHz

Collector output capacitance

C_ob

V_CB= 5 V, I_E= 0, f = 1 MHz

Note) : Rank classification

Rank

h_FE

80 to 160

120 to 220

Note) The part number in the parenthesis shows conventional part number.

12 3 4

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