Datasheet > 2SC2223

2SC2223

更新时间： 2024-11-21 05:56:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	37K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

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数据手册

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2SC2223 数据手册

SMD Type

TransistIoCrs

NPN Silicon Epitaxial Transistor

2SC2223

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Micro package.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

High gain bandwidth product fT=600MHz TYP

Low output capacitance. Cob=1.0PF TYP

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Total power dissipation

Junction temperature

P^T

150

T^j

125

Storage temperature range

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCB = 25V, IE=0

Min

Typ

Max

100

180

Unit

Collector cutoff current

Emitter cutoff current

I^CBO

I^EBO

h^FE

VEB = 3.0V, IC=0

DC current gain

VCE = 6.0V , IC = 1mA

IC = 10mA , IB = 1.0mA

0.72

0.1

600

1.0

Base-emitter voltage

V^BE

Collector-emitter saturation voltage

Gain bandwidth product

Output capacitance

V^CE(sat)IC = 10mA , IB = 1.0mA

0.3

f^T

VCE = 6.0V , IE = -1.0mA

VCB = 6.0V , IE = 0 , f = 1.0MHz

400

MHz

C^ob

Collector to base time constant

C^c-rb'bVCE = 6.0V, IE = -1.0mA, f = 31.9MHz

V^CE= 6.0V, IE = -1.0mA, RG = 50Ù,

Noise figure

f = 100MHz

hFE Classification

Marking

h^FE

F12

F13

F14

40 80

60 120

90 180

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