2SC2216

更新时间： 2024-11-09 12:50:11

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	203K
描述
NPN Silicon Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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2SC2216 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

2SC2216

Micro Commercial Components

Features

•

Capable of 300m Watts of Power Dissipation.

NPN Silicon

Plastic-Encapsulate

Transistor

Collector-current : I^CM=50mA

Collector-base Voltage:V^(BR)CBO= 50V

Operating and storage junction temperature range: -55^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

•

Lead Free Finish/Rohs Compliant ("P"Suffix designates

Compliant. See ordering information)

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

(I _C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I _C=100uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=100uAdc, I_C=0)

Collector Cut-off Current

(V_CB=50Vdc, I_E=0)

Emitter Cut-off Current

4.0

---

Vdc

---

Adc

0.1

uAdc

CBO

I_EBO

---

(V_EB=4.0Vdc, I_C=0)

ON CHARACTERISTICS

h _FE

DC Current Gain

---

140

0.2

1.5

---

Vdc

MHz

(I_C=12.5mAdc, V_CE=12.5Vdc)

Collector-Emitter Saturation Voltage

(I_C=15mAdc, I_B=1.5mAdc)

Base-Emitter Saturation Voltage

(I_C=15mAdc, I_B=1.5mAdc)

Transition Frequency

(V _CE=12.5Vdc, I_C=12.5mAdc,

f=100MHz)

V_CE(sat)

V_(BE)sat

---

300

DIMENSIONS

INCHES

DIM

MIN

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.170

.550

.010

.130

.096

.190

.590

.020

.160

.104

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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