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2SC2166_15 PDF预览

2SC2166_15

更新时间: 2024-11-21 01:17:07
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
2页 32K
描述
Silicon NPN Power Transistor

2SC2166_15 数据手册

 浏览型号2SC2166_15的Datasheet PDF文件第2页 
Product Specification  
Silicon NPN Power Transistor  
2SC2166  
DESCRIPTION  
·High Power Gain-  
: Gpe13.8dB @f= 27MHz, PO= 6W; VCC= 12V  
·High Reliability  
APPLICATIONS  
·Designed for 3 to 4 watts output power amplifiers in HF band  
mobile radio applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCBO  
VCER  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage RBE= 10Ω  
Emitter-Base Voltage  
VALUE  
45  
UNIT  
V
V
V
A
45  
4
Collector Current  
4
Collector Power Dissipation  
@TC=25℃  
12.5  
1.5  
PC  
W
Collector Power Dissipation  
@Ta=25℃  
Tj  
Junction Temperature  
150  
-55~150  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Ambient  
Thermal Resistance,Junction to Case  
83  
10  
Rth j-a  
Rth j-c  
Websitewww.jmnic.com  

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