Datasheet > 2SC2168

2SC2168

更新时间： 2024-11-24 07:30:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	89K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC2168 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2168

DESCRIPTION

·With TO-220 package

·High collector-emitter breakdown voltage

: V_CEO=200V(min)

APPLICATIONS

·Power amplifier applications

·TV vertical deflection applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

200

ꢀ

200

Open collector

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_C=25ꢀ

T_j

150

-55~150

T_stg

ꢀ

12 3

中文翻译

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