Datasheet > 暂无类别数据> 2SC1959-O-BP-HF

2SC1959-O-BP-HF

更新时间： 2024-11-20 13:04:15

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管开关
页数	文件大小	规格书
3页	269K
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数据手册

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2SC1959-O-BP-HF 数据手册

2SC1959-O

2SC1959-Y

2SC1959-GR

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Audio frequency low power amplifier applications, driver stage

Power Silicon

NPN Transistor

amplifier applications, switching applications

Excellent h_FELinearity: h_FE(2)=25(Min.) : V_CE=6.0V, I_C=400mA

1 Watt Amplifier applications

Complementary to 2SA562TM.

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

TO-92

•

Marking: C1959

Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS

Compliant. See ordering information)

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Breakdown Voltage

Emitter-Base Voltage

Rating

5.0

500

100

500

-55 to +150

Unit

Collector Current

^OC

I_B

Base Current

P_C

T_J

T_STG

Collector Power Dissipation

Operating Junction Temperature

Storage Temperature

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

I_CBO

Collector-Base Cutoff Current

---

0.1

uAdc

(V_CB=35Vdc, I =0)

I_EBO

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h_FE-1

h_FE-2

V_CE(sat)

V_BE

DC Current Gain*

--- 400

---

(I =100mAdc, V_CE=1.0Vdc)

DC Current Gain*

---

0.1

0.8

300

----

0.25

1.0

(I =400mAdc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

DIMENSIONS

Vdc

(I =100mAdc, I_B=10mAdc)

INCHES

MIN

Base-Emitter Voltage

---

DIM

MAX

.190

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

(I =100mAdc, V_CE=1.0Vdc)

.170

.550

.010

.130

.096

.190

.590

.020

.160

.104

f_T

Transition Frequency

200

---

MH_Z

(V_CE=6.0Vdc, I =20mAdc)

C_OBO

Collector Output Capacitance

--- 7.0

(V_CB=6.0Vdc, I =0, f=1.0MH_Z)

Note: h_FE(1)Classification O: 70~140, Y: 120~240, GR: 200~400

h_FE(2)Classification O: 25 (Min.), Y: 40 (Min.)

www.mccsemi.com

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Revision: A

2011/01/01

12 3

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与2SC1959-O-BP-HF相关器件

型号	品牌	获取价格	描述	数据表
2SC1959Y	CDIL	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC1959-Y	MCC	获取价格	Power Silicon NPN Transistor
2SC1959-Y-AP	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1959-Y-AP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SC1959-Y-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1959Y-BP	MCC	获取价格	500mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
2SC1959-Y-BP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SC1965	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 17V V(BR)CEO \| 1A I(C) \| TO-37VAR
2SC1966	MITSUBISHI	获取价格	NPN EPITAXIAL PLANAR TYPE(for RF power amplifier on UHF band mobile radio applications)
2SC1967	MITSUBISHI	获取价格	RF POWER TRANSISTOR(NPN EPITAXAIL PLANAR TYPE)

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