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2SB942AP PDF预览

2SB942AP

更新时间: 2024-09-21 20:29:19
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 240K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3

2SB942AP 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.74Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

2SB942AP 数据手册

 浏览型号2SB942AP的Datasheet PDF文件第2页浏览型号2SB942AP的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Power Transistors  
2SB0942 (2SB942), 2SB0942A (2SB942A)  
Silicon PNP epitaxial planar type  
For low-frequency power amplification  
Unit: mm  
Complementary to 2SD1267, 2SD1267A  
10.0 0.2  
5.5 0.2  
4.2 0.2  
2.7 0.2  
Features  
High forward current transfer ratio hFE which has satisfactory linearity  
Large collector-emitter saturation voltage VCE(sat)  
Full-pack package which can be installed to the heat sink with one screw  
φ 3.1 0.1  
Absolute Maximum Ratings TC = 25°C  
1.3 0.2  
Parameter  
Symbol  
Raig  
Unit  
1.4 0.1  
2SB0942  
2SB0942A  
2SB0942  
2SB0942A  
VCBO  
60  
V
+0.2  
–0.1  
Collector-base voltage  
(Emitter open)  
0.5  
0.8 0.1  
CEO  
V
Collector-emitter voltage  
(Base open)  
2.54 0.3  
5.08 0.5  
80  
1: Base  
Emitter-base voltage (Collector VEO  
5  
V
2: Collector  
3: Emitter  
EIAJ: SC-67  
1
2 3  
Collector current  
Peak collector current  
Collector power  
IC  
ICP  
PC  
4  
8  
A
TO-220F-A1 Package  
4
W
dissipation  
Ta = 25°C  
2
Junction temperare  
Storage tempure  
50  
°C  
°C  
55 to +150  
Electricharacteristis TC = 25°C 3°C  
Paramete
Symbol  
Conditions  
Min  
60  
80  
Typ  
Max  
Unit  
2SB042  
VCEO  
IC = −30 mA, IB = 0  
V
Colleor-emitter voltge  
Base op
2SB0942A  
Base-em
VBE  
ICES  
VCE = −4 V, IC = −3 A  
VCE = −60 V, VBE = 0  
VCE = −80 V, VBE = 0  
VCE = −30 V, IB = 0  
VEB = −5 V, IC = 0  
2  
V
2SB0942  
400  
400  
700  
1  
µA  
Collector-em
cutoff current (Eshort)  
2SB0942A  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICEO  
IEBO  
µA  
mA  
*
hFE1  
VCE = −4 V, IC = −1 A  
VCE = −4 V, IC = −3 A  
40  
15  
250  
hFE2  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = −4 A, IB = − 0.4 A  
1.5  
V
MHz  
µs  
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = − 0.1 A, f = 10 MHz  
30  
0.2  
0.5  
0.2  
IC = −4 A, IB1 = − 0.4 A, IB2 = 0.4 A  
VCC = −50 V  
Storage time  
µs  
Fall time  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
R
Q
P
hFE1  
40 to 90  
70 to 150  
120 to 250  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: February 2003  
SJD00022BED  
1

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