Datasheet > 2SB942P

2SB942P

更新时间： 2024-02-08 03:43:45

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	240K
描述
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3

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2SB942P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

2SB942P 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Power Transistors

2SB0942 (2SB942), 2SB0942A (2SB942A)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Unit: mm

Complementary to 2SD1267, 2SD1267A

10.0 0.2

5.5 0.2

4.2 0.2

2.7 ^0.2

■ Features

• High forward current transfer ratio h_FEwhich has satisfactory linearity

• Large collector-emitter saturation voltage V_CE(sat)

• Full-pack package which can be installed to the heat sink with one screw

φ 3.1 0.1

■ Absolute Maximum Ratings T_C= 25°C

1.3 0.2

Parameter

Symbol

Rating

Unit

1.4 0.1

2SB0942

2SB0942A

2SB0942

2SB0942A

V_CBO

−60

+0.2

–0.1

Collector-base voltage

(Emitter open)

0.5

0.8 0.1

−80

V_CEO

−60

Collector-emitter voltage

(Base open)

2.54 0.3

5.08 0.5

−80

1: Base

Emitter-base voltage (Collector open) V_EBO

−5

2: Collector

3: Emitter

EIAJ: SC-67

2 3

Collector current

Peak collector current

Collector power

I_C

I_CP

P_C

−4

−8

TO-220F-A1 Package

dissipation

T_a= 25°C

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

−60

−80

Typ

Max

Unit

2SB0942

V_CEO

I_C= −30 mA, I_B= 0

Collector-emitter voltage

(Base open)

2SB0942A

Base-emitter voltage

V_BE

I_CES

V_CE= −4 V, I_C= −3 A

V_CE= −60 V, V_BE= 0

V_CE= −80 V, V_BE= 0

V_CE= −30 V, I_B= 0

V_EB= −5 V, I_C= 0

−2

2SB0942

−400

−700

−1

µA

Collector-emitter

cutoff current (E-B short)

2SB0942A

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CEO

I_EBO

µA



h_FE1

V_CE= −4 V, I_C= −1 A

V_CE= −4 V, I_C= −3 A

250

h_FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= −4 A, I_B= − 0.4 A

−1.5

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= −10 V, I_C= − 0.1 A, f = 10 MHz

0.2

0.5

0.2

I_C= −4 A, I_B1= − 0.4 A, I_B2= 0.4 A

V_CC= −50 V

Storage time

µs

Fall time

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

40 to 90

70 to 150

120 to 250

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2003

SJD00022BED

12 3

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与2SB942P相关器件

型号	品牌	获取价格	描述	数据表
2SB942PQ	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB942Q	ISC	获取价格	Transistor
2SB942Q	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB942R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 4A I(C) \| SOT-186
2SB943	PANASONIC	获取价格	Silicon PNP epitaxial planar type(For power switching)
2SB943	ISC	获取价格	Silicon PNP Power Transistors
2SB943	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB943	JMNIC	获取价格	Silicon PNP Power Transistors
2SB943_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB943_2014	JMNIC	获取价格	Silicon PNP Power Transistors

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