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2SB942/2SB942A PDF预览

2SB942/2SB942A

更新时间: 2024-09-20 23:20:11
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其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 64K
描述
2SB942. 2SB942A - PNP Transistor

2SB942/2SB942A 数据手册

 浏览型号2SB942/2SB942A的Datasheet PDF文件第2页浏览型号2SB942/2SB942A的Datasheet PDF文件第3页 
Power Transistors  
2SB0942, 2SB0942A (2SB942, 2SB942A)  
Silicon PNP epitaxial planar type  
Unit: mm  
For low-frequency power amplification  
Complementary to 2SD1267 and 2SD1267A  
10.0 0.ꢀ  
5.5 0.ꢀ  
4.ꢀ 0.ꢀ  
ꢀ.7 0.ꢀ  
I Features  
High forward current transfer ratio hFE which has satisfactory  
linearity  
φ ꢁ.1 0.1  
Low collector to emitter saturation voltage VCE(sat)  
Full-pack package which can be installed to the heat sink with one  
screw  
1.ꢁ 0.ꢀ  
1.4 0.1  
I Absolute Maximum Ratings TC = 25°C  
+0.ꢀ  
–0.1  
0.5  
Parameter  
Symbol  
Rating  
Unit  
0.8 0.1  
2SB0942  
2SB0942A  
2SB0942  
2SB0942A  
VCBO  
60  
V
Collector to base  
ꢀ.54 0.ꢁ  
5.08 0.5  
voltage  
80  
1 : Base  
2 : Collector  
3 : Emitter  
VCEO  
60  
V
Collector to  
emitter voltage  
80  
1
ꢀ ꢁ  
EIAJ : SC-67  
TO-220F Package  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
5  
V
A
8  
4  
A
TC = 25°C  
Ta = 25°C  
PC  
40  
W
Collector power  
dissipation  
2
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
400  
400  
700  
700  
1  
Unit  
2SB0942  
2SB0942A  
2SB0942  
2SB0942A  
ICES  
VCE = 60 V, VBE = 0  
VCE = 80 V, VBE = 0  
VCE = 30 V, IB = 0  
VCE = 60 V, IB = 0  
VEB = 5 V, IC = 0  
IC = 30 mA, IB = 0  
µA  
Collector cutoff  
current  
ICEO  
µA  
Collector cutoff  
current  
Emitter cutoff current  
IEBO  
mA  
V
2SB0942  
VCEO  
60  
80  
70  
Collector to emitter  
voltage  
2SB0942A  
*
Forward current transfer ratio  
hFE1  
VCE = 4 V, IC = 1 A  
250  
hFE2  
VBE  
VCE(sat)  
fT  
VCE = 4 V, IC = 3 A  
15  
Base to emitter voltage  
Collector to emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE = 4 V, IC = 3 A  
2  
V
V
IC = 4 A, IB = 0.4 A  
1.5  
VCE = 10 V, IC = 0.1 A, f = 10 MHz  
IC = 4 A, IB1 = 0.4 A, IB2 = 0.4 A  
30  
0.2  
0.5  
0.2  
MHz  
µs  
ton  
Storage time  
tstg  
µs  
Fall time  
tf  
µs  
Note) : Rank classification  
*
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the  
rank classification.  
Rank  
Q
P
hFE1  
70 to 150  
120 to 250  
Note.) The Part numbers in the Parenthesis show conventional part number.  
1

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