Power Transistors
2SB0942, 2SB0942A (2SB942, 2SB942A)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification
Complementary to 2SD1267 and 2SD1267A
10.0 0.ꢀ
5.5 0.ꢀ
4.ꢀ 0.ꢀ
ꢀ.7 0.ꢀ
I Features
•
High forward current transfer ratio hFE which has satisfactory
linearity
φ ꢁ.1 0.1
•
•
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one
screw
1.ꢁ 0.ꢀ
1.4 0.1
I Absolute Maximum Ratings TC = 25°C
+0.ꢀ
–0.1
0.5
Parameter
Symbol
Rating
Unit
0.8 0.1
2SB0942
2SB0942A
2SB0942
2SB0942A
VCBO
−60
V
Collector to base
ꢀ.54 0.ꢁ
5.08 0.5
voltage
−80
1 : Base
2 : Collector
3 : Emitter
VCEO
−60
V
Collector to
emitter voltage
−80
1
ꢀ ꢁ
EIAJ : SC-67
TO-220F Package
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
−5
V
A
−8
−4
A
TC = 25°C
Ta = 25°C
PC
40
W
Collector power
dissipation
2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
−400
−400
−700
−700
−1
Unit
2SB0942
2SB0942A
2SB0942
2SB0942A
ICES
VCE = −60 V, VBE = 0
VCE = −80 V, VBE = 0
VCE = −30 V, IB = 0
VCE = −60 V, IB = 0
VEB = −5 V, IC = 0
IC = −30 mA, IB = 0
µA
Collector cutoff
current
ICEO
µA
Collector cutoff
current
Emitter cutoff current
IEBO
mA
V
2SB0942
VCEO
−60
−80
70
Collector to emitter
voltage
2SB0942A
*
Forward current transfer ratio
hFE1
VCE = −4 V, IC = −1 A
250
hFE2
VBE
VCE(sat)
fT
VCE = −4 V, IC = −3 A
15
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
VCE = −4 V, IC = −3 A
−2
V
V
IC = −4 A, IB = − 0.4 A
−1.5
VCE = −10 V, IC = − 0.1 A, f = 10 MHz
IC = −4 A, IB1 = − 0.4 A, IB2 = 0.4 A
30
0.2
0.5
0.2
MHz
µs
ton
Storage time
tstg
µs
Fall time
tf
µs
Note) : Rank classification
*
Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
Rank
Q
P
hFE1
70 to 150
120 to 250
Note.) The Part numbers in the Parenthesis show conventional part number.
1