Datasheet > 2SB929

2SB929

更新时间： 2024-11-17 07:30:23

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描述
Silicon PNP Epitaxial Planar Type

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中文翻译

获取价格

数据手册

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2SB929 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB929

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

High forward current transfer ratio hFE which has satisfactory linearity.

Low collector-emitter saturation voltage VCE(sat).

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-60

Collector-emitter voltage

Emitter-base voltage

Collector current

-60

-5

-3

-5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

1.3

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CES

Testconditons

Min

Typ

Max

-200

-300

-1

Unit

ìA

VCE = -60 V,VBE = 0

VCE = -30 V,IB = 0

VEB = -5 V, IC = 0

IC = -30 mA, IB = 0

V^CE= -4 V, IC = -1 A

V^CE= -4 V, IC = -3A

VCE = -4 V,IC = -3 A

Collector cutoff curent

I^CEO

Emitter-base cutoff current

Collector-emitter voltage

I^EBO

V^CEO

-60

250

Forward current transfer ratio

h^FE

Base to emitter voltage

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V^BE

-1.8

-1.2

V^CE(sat)IC = -3 A, IB = -0.375 A

f^T

t^on

t^stg

t^f

VCE = -10 V, IC = -0.5 A , f = 10 MHz

0.5

1.2

0.3

MHz

ìs

I^C= -1 A,IB1 = -0.1 A,IB2 = 0.1 A

Storage time

ìs

Fall time

ìs

hFE Classification

Rank

h^FE

70 150

120 250

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